SSM3J351R,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 60V 3.5A SOT-23F
$0.45
Available to order
Reference Price (USD)
3,000+
$0.11550
6,000+
$0.10850
15,000+
$0.10150
30,000+
$0.09800
Exquisite packaging
Discount
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SSM3J351R,LF by Toshiba Semiconductor and Storage is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, SSM3J351R,LF ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
- Vgs (Max): +10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23F
- Package / Case: SOT-23-3 Flat Leads
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