MRFX1K80NR5578
NXP USA Inc.
NXP USA Inc.
RF POWER FIELD-EFFECT TRANSISTOR
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NXP USA Inc. presents the MRFX1K80NR5578 RF MOSFET series the ultimate solution for high-power RF amplification. With exceptional linearity and low intermodulation distortion, these FETs excel in broadcast equipment and military communications. Their rugged construction ensures longevity even in harsh conditions. Don t compromise on quality request a quote today and experience the difference!
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 1.8MHz ~ 400MHz
- Gain: 24.4dB
- Voltage - Test: 65 V
- Current Rating (Amps): 100mA
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 1800W
- Voltage - Rated: 179 V
- Package / Case: OM-1230-4L2L
- Supplier Device Package: OM-1230-4L2L
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