PTAB182002TCV2R250XTMA1
Infineon Technologies
Infineon Technologies
IC RF FET LDMOS 190W H-49248H-4
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, Infineon Technologies's PTAB182002TCV2R250XTMA1 RF MOSFETs offer best-in-class power density and thermal resistance. Ideal for amateur radio and test instrumentation, these transistors minimize signal loss while maximizing output. Backed by rigorous quality testing. Start your procurement process inquire today about bulk order discounts!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.805GHz ~ 1.88GHz
- Gain: 14.8dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 520 mA
- Power - Output: 29W
- Voltage - Rated: 65 V
- Package / Case: H-49248H-4
- Supplier Device Package: H-49248H-4
Related Products
Wolfspeed, Inc.
PXAC201602FC-V1
Freescale Semiconductor
MHT1008NT1515
NXP USA Inc.
AFT23H201-24SR6
NXP USA Inc.
MRF5S19130HSR3
onsemi
MCH5818-TL-E
STMicroelectronics
PD85050S
Infineon Technologies
PTRA093302DCV1R2XTMA1
Microsemi Corporation
VRF191
Wolfspeed, Inc.
PTFB092707FH-V1-R0
Infineon Technologies