MRFE6VP6600GNR3
NXP USA Inc.
NXP USA Inc.
TRANS RF LDMOS 600W 50V
$171.38
Available to order
Reference Price (USD)
250+
$87.13364
Exquisite packaging
Discount
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Upgrade your RF designs with NXP USA Inc.'s MRFE6VP6600GNR3 MOSFETs, engineered for precision and efficiency. Key features include ultra-fast switching, minimal power loss, and robust ESD protection, perfect for high-frequency applications. From aerospace to IoT devices, these transistors deliver unmatched performance. Ready to optimize your circuit? Submit your inquiry now and our team will assist you promptly!
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 230MHz
- Gain: 24.7dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 600W
- Voltage - Rated: 133 V
- Package / Case: OM-780G-4L
- Supplier Device Package: OM-780G-4L
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