A2T09D400-23NR6
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
$174.48
Available to order
Reference Price (USD)
150+
$125.49107
Exquisite packaging
Discount
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Unlock next-gen RF performance with A2T09D400-23NR6 from NXP USA Inc.. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 716MHz ~ 960MHz
- Gain: 17.8dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 1.2 A
- Power - Output: 400W
- Voltage - Rated: 70 V
- Package / Case: OM-1230-4L2S
- Supplier Device Package: OM-1230-4L2S
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