MRFE6S9200HSR5
NXP USA Inc.
NXP USA Inc.
FET RF 66V 880MHZ NI-880S
$0.00
Available to order
Reference Price (USD)
50+
$99.97140
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Unlock next-gen RF performance with MRFE6S9200HSR5 from NXP USA Inc.. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 880MHz
- Gain: 21dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.4 A
- Power - Output: 58W
- Voltage - Rated: 66 V
- Package / Case: NI-880S
- Supplier Device Package: NI-880S
Related Products
NXP USA Inc.
MRF6P3300HR3
MACOM Technology Solutions
MAGX-0110087
onsemi
2SK3979-TL-E
Ampleon USA Inc.
BLC2425M9XS250Z
Microchip Technology
VRF148AMP
NXP USA Inc.
A2T18S260W12NR3
Freescale Semiconductor
MRF19125R5
NXP USA Inc.
MRF6S19060MBR1
Ampleon USA Inc.
BLF8G20LS-200V
NXP USA Inc.