MRF6S19060MBR1
NXP USA Inc.
NXP USA Inc.
FET RF 68V 1.93GHZ TO272-4
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The MRF6S19060MBR1 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.93GHz
- Gain: 16dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 610 mA
- Power - Output: 12W
- Voltage - Rated: 68 V
- Package / Case: TO-272-4
- Supplier Device Package: TO-272 WB-4
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