MRFE6S9130HSR3
NXP USA Inc.
NXP USA Inc.
FET RF 66V 880MHZ NI-780S
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Upgrade your RF designs with NXP USA Inc.'s MRFE6S9130HSR3 MOSFETs, engineered for precision and efficiency. Key features include ultra-fast switching, minimal power loss, and robust ESD protection, perfect for high-frequency applications. From aerospace to IoT devices, these transistors deliver unmatched performance. Ready to optimize your circuit? Submit your inquiry now and our team will assist you promptly!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 880MHz
- Gain: 19.2dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 950 mA
- Power - Output: 27W
- Voltage - Rated: 66 V
- Package / Case: NI-780S
- Supplier Device Package: NI-780S
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