NE6510179A-T1-A
CEL
CEL
FET RF 8V 1.9GHZ 79A
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Unlock next-gen RF performance with NE6510179A-T1-A from CEL. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Obsolete
- Transistor Type: HFET
- Frequency: 1.9GHz
- Gain: 10dB
- Voltage - Test: 3.5 V
- Current Rating (Amps): 2.8A
- Noise Figure: -
- Current - Test: 200 mA
- Power - Output: 32.5dBm
- Voltage - Rated: 8 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 79A
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