MRF8S18120HSR3,128
NXP USA Inc.
NXP USA Inc.
RF L BAND, N-CHANNEL
$100.21
Available to order
Reference Price (USD)
1+
$100.21000
500+
$99.2079
1000+
$98.2058
1500+
$97.2037
2000+
$96.2016
2500+
$95.1995
Exquisite packaging
Discount
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Optimize your electronic circuits with NXP USA Inc. s MRF8S18120HSR3,128, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how MRF8S18120HSR3,128 can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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