SIZ998BDT-T1-GE3
Vishay Siliconix
Vishay Siliconix
DUAL N-CHANNEL 30-V (D-S) MOSFET
$0.98
Available to order
Reference Price (USD)
1+
$0.98000
500+
$0.9702
1000+
$0.9604
1500+
$0.9506
2000+
$0.9408
2500+
$0.931
Exquisite packaging
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The SIZ998BDT-T1-GE3 by Vishay Siliconix is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Vishay Siliconix s SIZ998BDT-T1-GE3 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual), Schottky
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
- Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 46.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 2130pF @ 15V
- Power - Max: 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PowerPair® (6x5)
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