MRF8P20140WHSR3
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 65V 1.91GHZ NI780S-4
$0.00
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Reference Price (USD)
250+
$93.19816
Exquisite packaging
Discount
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The MRF8P20140WHSR3 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 1.88GHz ~ 1.91GHz
- Gain: 16dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 500 mA
- Power - Output: 24W
- Voltage - Rated: 65 V
- Package / Case: NI-780S-4L
- Supplier Device Package: NI-780S-4L
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