MRF6V4300NBR5
Freescale Semiconductor
Freescale Semiconductor
RF POWER FIELD-EFFECT TRANSISTOR
$100.12
Available to order
Reference Price (USD)
1+
$100.12000
500+
$99.1188
1000+
$98.1176
1500+
$97.1164
2000+
$96.1152
2500+
$95.114
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet Freescale Semiconductor's MRF6V4300NBR5, a game-changing RF MOSFET tailored for cutting-edge wireless technologies. Featuring advanced packaging for reduced parasitic effects and enhanced thermal management, these transistors are vital for 5G base stations and satellite systems. Trusted by engineers worldwide for consistent performance. Have questions? Reach out now for expert guidance!
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 10MHz ~ 600MHz
- Gain: 22dB
- Voltage - Test: 50 V
- Current Rating (Amps): 2.5mA
- Noise Figure: -
- Current - Test: 900 mA
- Power - Output: 300W
- Voltage - Rated: 110 V
- Package / Case: TO-272BB
- Supplier Device Package: TO-272 WB-4
Related Products
NXP USA Inc.
A2T21H360-24SR6
Freescale Semiconductor
MRF7S18170HR3
Ampleon USA Inc.
BLP10H6120PY
onsemi
MCH5805-TL-E
Wolfspeed, Inc.
PTFB182503EL-V1-R0
NXP USA Inc.
A3I20X050GNR1
Freescale Semiconductor
MRFE6VP61K25NR6
Ampleon USA Inc.
BLC9G22LS-120VTY
NXP USA Inc.
AFT09H310-04GSR6
Ampleon USA Inc.