A3I20X050GNR1
NXP USA Inc.
NXP USA Inc.
AIRFAST RF LDMOS WIDEBAND INTEGR
$59.72
Available to order
Reference Price (USD)
1+
$59.72400
500+
$59.12676
1000+
$58.52952
1500+
$57.93228
2000+
$57.33504
2500+
$56.7378
Exquisite packaging
Discount
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For mission-critical RF amplification, choose NXP USA Inc.'s A3I20X050GNR1 MOSFETs. Combining silicon carbide (SiC) robustness with precision matching networks, they outperform in avionics and marine navigation systems. Extended lifecycle ratings reduce total cost of ownership. Your perfect component awaits click inquire to connect with our technical specialists!
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 1.8GHz ~ 2.2GHz
- Gain: 29.3dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 145 mA
- Power - Output: 6.3W
- Voltage - Rated: 65 V
- Package / Case: OM-400G-8
- Supplier Device Package: OM-400G-8
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