MRF6V13250HSR3
NXP USA Inc.
NXP USA Inc.
FET RF 120V 1.3GHZ NI780S
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The MRF6V13250HSR3 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Discontinued at Digi-Key
- Transistor Type: LDMOS
- Frequency: 1.3GHz
- Gain: 22.7dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 250W
- Voltage - Rated: 120 V
- Package / Case: NI-780S
- Supplier Device Package: NI-780S
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