MRF6V10250HSR3
NXP USA Inc.
NXP USA Inc.
FET RF 100V 1.09GHZ NI780S
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The MRF6V10250HSR3 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.09GHz
- Gain: 21dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 250 mA
- Power - Output: 250W
- Voltage - Rated: 100 V
- Package / Case: NI-780S
- Supplier Device Package: NI-780S
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