BF1208D,115
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH DUAL GATE SOD666
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet NXP USA Inc.'s BF1208D,115, a game-changing RF MOSFET tailored for cutting-edge wireless technologies. Featuring advanced packaging for reduced parasitic effects and enhanced thermal management, these transistors are vital for 5G base stations and satellite systems. Trusted by engineers worldwide for consistent performance. Have questions? Reach out now for expert guidance!
Specifications
- Product Status: Obsolete
- Transistor Type: N-Channel Dual Gate
- Frequency: 400MHz
- Gain: 32dB
- Voltage - Test: 5 V
- Current Rating (Amps): 30mA
- Noise Figure: 0.9dB
- Current - Test: 19 mA
- Power - Output: -
- Voltage - Rated: 6 V
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
Related Products
NXP USA Inc.
ON5174,118
Infineon Technologies
PTFA181001E V4 T500
NXP USA Inc.
AFT21S220W02SR3
Ampleon USA Inc.
BLF6G27-10G,118
NXP USA Inc.
MRF8S9260HR3
onsemi
J310_D26Z
Infineon Technologies
PTFB191501FV1R250XTMA1
Ampleon USA Inc.
BLF6G10L-40BRN,118
Infineon Technologies
PTFA071701FV4R250XTMA1
NXP USA Inc.