MRF6S19200HSR3
NXP USA Inc.
NXP USA Inc.
FET RF 66V 1.99GHZ NI780S
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MRF6S19200HSR3 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.93GHz ~ 1.99GHz
- Gain: 17.9dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.6 A
- Power - Output: 56W
- Voltage - Rated: 66 V
- Package / Case: NI-780S
- Supplier Device Package: NI-780S
Related Products
NXP USA Inc.
MRFG35010ANR5
NXP USA Inc.
MRF6S9130HR3
CEL
NE3516S02-T1C-A
STMicroelectronics
SD2942
NXP USA Inc.
BF512,235
Infineon Technologies
PTFA260851F V1
onsemi
BF256C
STMicroelectronics
PD20010-E
Ampleon USA Inc.
BLF3G21-6,135
Infineon Technologies