PD20010-E
STMicroelectronics
STMicroelectronics
TRANS RF N-CH FET POWERSO-10RF
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STMicroelectronics presents the PD20010-E RF MOSFET series the ultimate solution for high-power RF amplification. With exceptional linearity and low intermodulation distortion, these FETs excel in broadcast equipment and military communications. Their rugged construction ensures longevity even in harsh conditions. Don t compromise on quality request a quote today and experience the difference!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2GHz
- Gain: 11dB
- Voltage - Test: 13.6 V
- Current Rating (Amps): 5A
- Noise Figure: -
- Current - Test: 150 mA
- Power - Output: 10W
- Voltage - Rated: 40 V
- Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Supplier Device Package: PowerSO-10RF (Formed Lead)
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