MKI50-12E7
IXYS
IXYS
IGBT MODULE 1200V 90A 350W E2
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IXYS's MKI50-12E7 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust IXYS for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 90 A
- Power - Max: 350 W
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
- Current - Collector Cutoff (Max): 800 µA
- Input Capacitance (Cies) @ Vce: 3.8 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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