BLF8G24L-200P,112
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 65V 17.2DB SOT539A
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Discover high-performance BLF8G24L-200P,112 RF MOSFETs from Ampleon USA Inc., designed for superior signal amplification in demanding applications. These transistors feature low noise, high gain, and excellent thermal stability, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless infrastructure, our FETs ensure reliable performance in critical environments. Contact us today for pricing and technical support let s power your next project together!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.3GHz ~ 2.4GHz
- Gain: 17.2dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.74 A
- Power - Output: 60W
- Voltage - Rated: 65 V
- Package / Case: SOT-539A
- Supplier Device Package: SOT539A
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