MHE1003NR3
NXP USA Inc.
NXP USA Inc.
RF POWER LDMOS TRANSISTOR FOR CO
$0.00
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Reference Price (USD)
250+
$130.19528
Exquisite packaging
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Upgrade your RF designs with NXP USA Inc.'s MHE1003NR3 MOSFETs, engineered for precision and efficiency. Key features include ultra-fast switching, minimal power loss, and robust ESD protection, perfect for high-frequency applications. From aerospace to IoT devices, these transistors deliver unmatched performance. Ready to optimize your circuit? Submit your inquiry now and our team will assist you promptly!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.4GHz ~ 2.5GHz
- Gain: 14.1dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 50 mA
- Power - Output: 53dBm
- Voltage - Rated: 65 V
- Package / Case: OM-780-2
- Supplier Device Package: OM-780-2
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