BF1101WR,135
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 7V DUAL SOT343R
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The BF1101WR,135 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Obsolete
- Transistor Type: N-Channel Dual Gate
- Frequency: 800MHz
- Gain: -
- Voltage - Test: 5 V
- Current Rating (Amps): 30mA
- Noise Figure: 1.7dB
- Current - Test: 12 mA
- Power - Output: -
- Voltage - Rated: 7 V
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: CMPAK-4
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