MDS150
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 60V 1.09GHZ 55AW
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Simplify your RF design challenges with MDS150 from Microsemi Corporation. These BJT transistors offer consistent hFE matching and low saturation voltage, essential for push-pull configurations and mixer circuits. Serving industries from marine navigation to renewable energy. Connect with our team we provide end-to-end support from selection to delivery!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 60V
- Frequency - Transition: 1.03GHz ~ 1.09GHz
- Noise Figure (dB Typ @ f): -
- Gain: 10dB
- Power - Max: 350W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
- Current - Collector (Ic) (Max): 4A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55AW
- Supplier Device Package: 55AW
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