NE851M33-T3-A
CEL
CEL
RF TRANS NPN 5.5V 4.5GHZ 3SMINI
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Upgrade your RF designs with CEL's NE851M33-T3-A Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how NE851M33-T3-A can enhance your projects!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5.5V
- Frequency - Transition: 4.5GHz
- Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz
- Gain: -
- Power - Max: 130mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Lead
- Supplier Device Package: 3-SuperMiniMold (M33)
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