IXXH50N60B3D1
IXYS
IXYS
IGBT 600V 120A 600W TO247
$11.95
Available to order
Reference Price (USD)
1+
$10.58000
10+
$9.52100
30+
$8.67467
120+
$7.82825
270+
$7.19356
510+
$6.55882
1,020+
$5.71253
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXXH50N60B3D1 Single IGBT from IXYS redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. IXYS stands behind every IXXH50N60B3D1 with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
- Power - Max: 600 W
- Switching Energy: 670µJ (on), 740µJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 27ns/100ns
- Test Condition: 360V, 36A, 5Ohm, 15V
- Reverse Recovery Time (trr): 25 ns
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXXH)
Related Products
Microchip Technology
APT50GT120B2RG
Fairchild Semiconductor
FGH20N6S2
Infineon Technologies
SGP20N60XKSA1
Infineon Technologies
SGP10N60A
Toshiba Semiconductor and Storage
GT30N135SRA,S1E
onsemi
NGTG25N120FL2WG
Renesas Electronics America Inc
RJH1CV6DPK-00#T0
Renesas Electronics America Inc
RJH60A83RDPN-E0#T2
IXYS
IXYX100N120B3
IXYS