GT30N135SRA,S1E
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
D-IGBT TO-247 VCES=1350V IC=30A
$3.88
Available to order
Reference Price (USD)
1+
$3.88000
500+
$3.8412
1000+
$3.8024
1500+
$3.7636
2000+
$3.7248
2500+
$3.686
Exquisite packaging
Discount
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The GT30N135SRA,S1E Single IGBT by Toshiba Semiconductor and Storage sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Toshiba Semiconductor and Storage for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1350 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 60A
- Power - Max: 348 W
- Switching Energy: -, 1.3mJ (off)
- Input Type: Standard
- Gate Charge: 270 nC
- Td (on/off) @ 25°C: -
- Test Condition: 300V, 60A, 39Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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