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IXTU02N50D

IXYS
IXTU02N50D Preview
IXYS
MOSFET N-CH 500V 200MA TO251
$1.94
Available to order
Reference Price (USD)
75+
$2.81253
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V
  • Vgs(th) (Max) @ Id: 5V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251AA
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

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