NTHD4N02FT1
onsemi
onsemi
MOSFET N-CH 20V 2.9A CHIPFET
$0.22
Available to order
Reference Price (USD)
1+
$0.22000
500+
$0.2178
1000+
$0.2156
1500+
$0.2134
2000+
$0.2112
2500+
$0.209
Exquisite packaging
Discount
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Experience the power of NTHD4N02FT1, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, NTHD4N02FT1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 910mW (Tj)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: ChipFET™
- Package / Case: 8-SMD, Flat Lead
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