IXTT02N450HV
IXYS
IXYS
MOSFET N-CH 4500V 200MA TO268
$32.50
Available to order
Reference Price (USD)
1+
$22.00000
30+
$18.70000
120+
$17.38000
510+
$15.40000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXTT02N450HV by IXYS is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IXTT02N450HV ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 4500 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 113W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268AA
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Related Products
STMicroelectronics
STD13NM60N
Vishay Siliconix
SI1469DH-T1-BE3
IXYS
IXTP02N120P
Infineon Technologies
BSP317PH6327XTSA1
Infineon Technologies
IAUA200N04S5N010AUMA1
onsemi
NDTL03N150CG
Vishay Siliconix
SISS65DN-T1-GE3
STMicroelectronics
STP4NK60ZFP
Infineon Technologies
IPL60R105P7AUMA1
onsemi