IAUA200N04S5N010AUMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 200A 5HSOF
$3.45
Available to order
Reference Price (USD)
2,000+
$1.55078
Exquisite packaging
Discount
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Boost your electronic applications with IAUA200N04S5N010AUMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IAUA200N04S5N010AUMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-5-1
- Package / Case: 5-PowerSFN
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