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LND150N3-G

Microchip Technology
LND150N3-G Preview
Microchip Technology
MOSFET N-CH 500V 30MA TO92-3
$0.63
Available to order
Reference Price (USD)
1+
$0.46000
25+
$0.39160
100+
$0.36050
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 740mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)

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