IXTQ52P10P
IXYS
IXYS
MOSFET P-CH 100V 52A TO3P
$7.40
Available to order
Reference Price (USD)
1+
$5.68000
30+
$4.56767
120+
$4.16150
510+
$3.36980
1,020+
$2.84200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IXTQ52P10P by IXYS. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IXTQ52P10P inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
Related Products
onsemi
NDF08N50ZH
onsemi
MTP3055VL
Infineon Technologies
IPP60R950C6XKSA1
Infineon Technologies
IPD42DP15LMATMA1
Toshiba Semiconductor and Storage
SSM3J332R,LF
Nexperia USA Inc.
BUK6D22-30EX
Fairchild Semiconductor
FDPF5N50TYDTU
Nexperia USA Inc.
BSH105,235
Fairchild Semiconductor
FDD6680A
Infineon Technologies