BSH105,235
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 20V 1.05A TO236AB
$0.10
Available to order
Reference Price (USD)
1+
$0.09570
500+
$0.094743
1000+
$0.093786
1500+
$0.092829
2000+
$0.091872
2500+
$0.090915
Exquisite packaging
Discount
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BSH105,235 by Nexperia USA Inc. is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, BSH105,235 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.05A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id: 570mV @ 1mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 16 V
- FET Feature: -
- Power Dissipation (Max): 417mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
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