IXTN30N100L
IXYS
IXYS
MOSFET N-CH 1000V 30A SOT227B
$69.43
Available to order
Reference Price (USD)
1+
$54.43000
10+
$50.89700
25+
$47.07200
100+
$44.13000
Exquisite packaging
Discount
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Discover high-performance IXTN30N100L from IXYS, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IXTN30N100L delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 15A, 20V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 20 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 800W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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