BSP149H6906XTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 200V 660MA SOT223-4
$1.62
Available to order
Reference Price (USD)
1,000+
$0.61861
2,000+
$0.58163
5,000+
$0.55574
10,000+
$0.53725
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BSP149H6906XTSA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BSP149H6906XTSA1 inquire now for more details!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
- Vgs(th) (Max) @ Id: 1V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.8W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
Related Products
Vishay Siliconix
SQA403EJ-T1_GE3
Microchip Technology
APT34F60B
Diodes Incorporated
2N7002EQ-13-F
Harris Corporation
RFD16N05L
Diodes Incorporated
DMTH6010SK3-13
Fairchild Semiconductor
HUF75631SK8
onsemi
FDC602P
IXYS
IXTN550N055T2
Infineon Technologies
IPB083N10N3GATMA1
Toshiba Semiconductor and Storage