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IXTN17N120L

IXYS
IXTN17N120L Preview
IXYS
MOSFET N-CH 1200V 15A SOT-227B
$54.61
Available to order
Reference Price (USD)
1+
$54.61000
500+
$54.0639
1000+
$53.5178
1500+
$52.9717
2000+
$52.4256
2500+
$51.8795
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC

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