IXTK102N30P
IXYS
IXYS
MOSFET N-CH 300V 102A TO264
$15.69
Available to order
Reference Price (USD)
25+
$10.00400
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IXTK102N30P by IXYS. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IXTK102N30P inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 700W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 (IXTK)
- Package / Case: TO-264-3, TO-264AA
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