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IXTN170P10P

IXYS
IXTN170P10P Preview
IXYS
MOSFET P-CH 100V 170A SOT227B
$37.01
Available to order
Reference Price (USD)
1+
$26.00000
10+
$24.05000
30+
$22.10000
100+
$20.54000
250+
$18.85000
500+
$17.94000
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 890W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC

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