IXTA75N10P-TRL
IXYS
IXYS
MOSFET N-CH 100V 75A TO263
$3.15
Available to order
Reference Price (USD)
1+
$3.15076
500+
$3.1192524
1000+
$3.0877448
1500+
$3.0562372
2000+
$3.0247296
2500+
$2.993222
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXTA75N10P-TRL by IXYS is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IXTA75N10P-TRL ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 37.5A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
onsemi
FDS9435A
Panjit International Inc.
PJL9403_R2_00001
onsemi
NVH4L040N65S3F
Infineon Technologies
IMBG120R030M1HXTMA1
STMicroelectronics
STW45N60DM2AG
Infineon Technologies
BSC030P03NS3GAUMA1
Fairchild Semiconductor
HUFA76619D3ST
onsemi
FDWS86368-F085
STMicroelectronics
STL33N60DM6
Renesas Electronics America Inc