IMBG120R030M1HXTMA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1.2KV 56A TO263
$25.45
Available to order
Reference Price (USD)
1+
$25.45000
500+
$25.1955
1000+
$24.941
1500+
$24.6865
2000+
$24.432
2500+
$24.1775
Exquisite packaging
Discount
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Experience the power of IMBG120R030M1HXTMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IMBG120R030M1HXTMA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 41mOhm @ 25A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 11.5mA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
- Vgs (Max): +18V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 800 V
- FET Feature: Standard
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-12
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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