IXGT64N60B3
IXYS
IXYS
DISC IGBT PT-MID FREQUENCY TO-26
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXGT64N60B3 Single IGBT by IXYS sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with IXYS for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Obsolete
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 64 A
- Current - Collector Pulsed (Icm): 400 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
- Power - Max: 460 W
- Switching Energy: 1.5mJ (on), 1mJ (off)
- Input Type: Standard
- Gate Charge: 168 nC
- Td (on/off) @ 25°C: 25ns/138ns
- Test Condition: 480V, 50A, 3Ohm, 15V
- Reverse Recovery Time (trr): 41 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
Related Products
Infineon Technologies
IRG4CC80SB
Infineon Technologies
IRGP30B120KD-EP-INF
Infineon Technologies
IHY20N120R3XKSA1
Infineon Technologies
AUXMIGP4063D
onsemi
NGTD30T120F2WP
Infineon Technologies
BSM100GB120DN2K
Renesas Electronics America Inc
RJP63F3ADPP-90#T2F
Infineon Technologies
IGC99T120T8RQX1SA1
Infineon Technologies
IRG7PK35UD1MPBF
Infineon Technologies