IHY20N120R3XKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 40A 310W TO247HC-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize power control with IHY20N120R3XKSA1 Single IGBTs from Infineon Technologies, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. Infineon Technologies ensures IHY20N120R3XKSA1 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
- Power - Max: 310 W
- Switching Energy: 950µJ (off)
- Input Type: Standard
- Gate Charge: 211 nC
- Td (on/off) @ 25°C: -/387ns
- Test Condition: 600V, 20A, 15Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PG-TO247HC-3
Related Products
Infineon Technologies
AUXMIGP4063D
onsemi
NGTD30T120F2WP
Infineon Technologies
BSM100GB120DN2K
Renesas Electronics America Inc
RJP63F3ADPP-90#T2F
Infineon Technologies
IGC99T120T8RQX1SA1
Infineon Technologies
IRG7PK35UD1MPBF
Infineon Technologies
SIGC25T60UNX7SA2
Harris Corporation
HGTP10N40E1D
Littelfuse Inc.
XGD8290TI
onsemi