IXFN150N10
IXYS
IXYS
MOSFET N-CH 100V 150A SOT-227
$32.08
Available to order
Reference Price (USD)
1+
$32.07550
500+
$31.754745
1000+
$31.43399
1500+
$31.113235
2000+
$30.79248
2500+
$30.471725
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IXFN150N10, a premium Transistors - FETs, MOSFETs - Single from IXYS. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IXFN150N10 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
Related Products
Infineon Technologies
BSD214SNL6327
Renesas Electronics America Inc
NP88N055MLE-S18-AY
onsemi
FDPF190N15A
Diodes Incorporated
DMN4035L-7
Harris Corporation
HUF75307D3ST
Vishay Siliconix
SI5441BDC-T1-E3
Diodes Incorporated
ZXMN10B08E6QTA
Vishay Siliconix
IRFD420PBF
Nexperia USA Inc.
PSMN7R0-100PS,127
Infineon Technologies