IXFH54N65X3
IXYS
IXYS
MOSFET 54A 650V X3 TO247
$12.36
Available to order
Reference Price (USD)
1+
$12.36000
500+
$12.2364
1000+
$12.1128
1500+
$11.9892
2000+
$11.8656
2500+
$11.742
Exquisite packaging
Discount
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Optimize your electronic systems with IXFH54N65X3, a high-quality Transistors - FETs, MOSFETs - Single from IXYS. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IXFH54N65X3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 59mOhm @ 27A, 10V
- Vgs(th) (Max) @ Id: 5.2V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 625W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXFH)
- Package / Case: TO-247-3
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Yangzhou Yangjie Electronic Technology Co.,Ltd