BSZ900N15NS3GATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 150V 13A 8TSDSON
$1.64
Available to order
Reference Price (USD)
5,000+
$0.49932
10,000+
$0.48055
Exquisite packaging
Discount
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Discover high-performance BSZ900N15NS3GATMA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, BSZ900N15NS3GATMA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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