IXFH52N30P
IXYS
IXYS
MOSFET N-CH 300V 52A TO247AD
$7.65
Available to order
Reference Price (USD)
30+
$4.72500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover IXFH52N30P, a versatile Transistors - FETs, MOSFETs - Single solution from IXYS, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 66mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
Related Products
Toshiba Semiconductor and Storage
TK10Q60W,S1VQ
onsemi
FDMS86202
Vishay Siliconix
SIHP065N60E-BE3
Renesas Electronics America Inc
RJK0355DSP-00#J0
UnitedSiC
UJ3C065080T3S
Infineon Technologies
IPB100N04S2-04
onsemi
NTMFS4945NT3G
Rectron USA
RM20N650TI
onsemi
RFD16N05LSM9A
Fairchild Semiconductor