IPB100N04S2-04
Infineon Technologies
Infineon Technologies
IPB100N04 - 20V-40V N-CHANNEL AU
$1.98
Available to order
Reference Price (USD)
1+
$1.98000
500+
$1.9602
1000+
$1.9404
1500+
$1.9206
2000+
$1.9008
2500+
$1.881
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPB100N04S2-04 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPB100N04S2-04 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
onsemi
NTMFS4945NT3G
Rectron USA
RM20N650TI
onsemi
RFD16N05LSM9A
Fairchild Semiconductor
RF1S70N06SM
IXYS
IXTA230N075T2-TRL
Vishay Siliconix
IRF9Z14PBF-BE3
Diodes Incorporated
ZXMP7A17KTC
NXP Semiconductors
BUK7E2R3-40E,127
Texas Instruments
CSD19505KTTT
onsemi