IXFB90N85X
IXYS
IXYS
MOSFET N-CH 850V 90A PLUS264
$39.73
Available to order
Reference Price (USD)
1+
$29.00000
25+
$24.65000
100+
$22.91000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXYS presents IXFB90N85X, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IXFB90N85X delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 850 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 41mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 13300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1785W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS264™
- Package / Case: TO-264-3, TO-264AA
Related Products
Diodes Incorporated
DMN65D8LT-13
Infineon Technologies
IPI80N04S3-06
STMicroelectronics
STF16N65M2
Diodes Incorporated
DMN3021LFDF-13
Vishay Siliconix
SI4459ADY-T1-GE3
Micro Commercial Co
SI3415B-TP
Nexperia USA Inc.
PMPB24EPX
Infineon Technologies
BSC022N04LSATMA1
Fairchild Semiconductor
FDFMA2P853T
Sanyo