IXFN50N120SK
IXYS
IXYS
SICFET N-CH 1200V 48A SOT227B
$79.42
Available to order
Reference Price (USD)
10+
$59.66400
Exquisite packaging
Discount
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Discover high-performance IXFN50N120SK from IXYS, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IXFN50N120SK delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 20 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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